Microstructure evolution at a triple junction in polycrystalline silicon

Alessandra Satta, Enrico Pisanu, Luciano Colombo, Fabrizio Cleri

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9 Citations (Scopus)

Abstract

We studied two elementary microstructure evolution events taking place at a multiple-twin triple junction (TJ) in Si by means of molecular dynamics simulations with the Stillinger-Weber empirical potential. Starting from a relaxed configuration, we inserted a fourth grain in the TJ location and determined the critical radius and the instability mode by which the central grain disappears by progressively shrinking. In a second set of simulations, we introduced a microcrack in the grain boundary plane and made it advance towards the TJ under the effect of the external loading. A kind of brittle-ductile transition is observed when the fracture changes from intergranular to intragranular.
Original languageEnglish
Pages (from-to)13003 - 13008
Number of pages6
JournalJournal of Physics Condensed Matter
Volume14
Issue number48
DOIs
Publication statusPublished - 16 Dec 2002
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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