MOVPE growth optimisation of CdTe epitaxial layers for p-i-n diode X-ray detector fabrication

M. Traversa, F. Marzo, P. Prete, L. Tapfer, A. Cappello, N. Lovergine, A.M. Mancini

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4 Citations (Scopus)

Abstract

We report on the atmospheric pressure metalorganic vapour phase epitaxy of both nominally undoped and iodine (I) donor doped CdTe layers on high resistivity (111)B CdTe substrates, as a preliminary step towards the fabrication of p-i-n diode X-ray detectors. CdTe epilayers were grown at 330°C after in-situ H2 heat treatment of the substrate for surface oxide removal. We show that the homoepitaxy of CdTe critically depends on in-situ heat treatment temperature (TA), best epilayer morphology and reduced surface roughness being obtained for TA = 350°C. Secondary ion mass spectrometry analysis of I-doped samples shows good dopant incorporation, which increases for Te:Cd precursor molar flow ratios in the vapour below unity. I-doped samples grown under the latter conditions have room temperature resistivity three orders of magnitude lower than for undoped layers and electron concentrations ∼1016 cm-3. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
Original languageEnglish
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event12th International Conference on II-VI Compounds - , Poland
Duration: 1 Jan 2006 → …

Conference

Conference12th International Conference on II-VI Compounds
CountryPoland
Period1/1/06 → …

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Traversa, M., Marzo, F., Prete, P., Tapfer, L., Cappello, A., Lovergine, N., & Mancini, A. M. (2006). MOVPE growth optimisation of CdTe epitaxial layers for p-i-n diode X-ray detector fabrication. Paper presented at 12th International Conference on II-VI Compounds, Poland. https://doi.org/10.1002/pssc.200564667