MOVPE growth optimisation of CdTe epitaxial layers for p-i-n diode X-ray detector fabrication

M. Traversa, F. Marzo, P. Prete, L. Tapfer, A. Cappello, N. Lovergine, A.M. Mancini

Research output: Contribution to conferencePaper

4 Citations (Scopus)


We report on the atmospheric pressure metalorganic vapour phase epitaxy of both nominally undoped and iodine (I) donor doped CdTe layers on high resistivity (111)B CdTe substrates, as a preliminary step towards the fabrication of p-i-n diode X-ray detectors. CdTe epilayers were grown at 330°C after in-situ H2 heat treatment of the substrate for surface oxide removal. We show that the homoepitaxy of CdTe critically depends on in-situ heat treatment temperature (TA), best epilayer morphology and reduced surface roughness being obtained for TA = 350°C. Secondary ion mass spectrometry analysis of I-doped samples shows good dopant incorporation, which increases for Te:Cd precursor molar flow ratios in the vapour below unity. I-doped samples grown under the latter conditions have room temperature resistivity three orders of magnitude lower than for undoped layers and electron concentrations ∼1016 cm-3. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
Original languageEnglish
Publication statusPublished - 2006
Externally publishedYes
Event12th International Conference on II-VI Compounds - , Poland
Duration: 1 Jan 2006 → …


Conference12th International Conference on II-VI Compounds
Period1/1/06 → …


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Traversa, M., Marzo, F., Prete, P., Tapfer, L., Cappello, A., Lovergine, N., & Mancini, A. M. (2006). MOVPE growth optimisation of CdTe epitaxial layers for p-i-n diode X-ray detector fabrication. Paper presented at 12th International Conference on II-VI Compounds, Poland.