Nanostructured porous silicon for gas sensor applications

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Abstract

The response of two different types of nanostructured gas sensor to oxygen has been investigated. The first (optical) is based on the photoluminescence quenching effect of a porous silicon sample, the second on the changes of the electrical conductance v. environment of a porous silicon free standing membrane on an insulating neutral substrate. The response of both the devices to oxygen have been measured and compared. The optical based gas sensor exhibits a quenching following the Stern - Volmer model. The corresponding reactivity rate constant is found to depend on a characteristic nanodimension of the wire. The electrically operated sensor is more sensitive to oxygen and shows an opposite behavior if exposed to a reducing environment. © 2002 IoM Communications Ltd.
Original languageEnglish
Pages (from-to)767 - 771
Number of pages5
JournalMaterials Science and Technology
Volume18
Issue number7
DOIs
Publication statusPublished - Jul 2002

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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