New designed procedure for G/SiO

Maria Sarno, Sergio Galvagno, Rosangela Piscitelli, Sabrina Portofino, Claudia Cirillo, Paolo Ciambelli

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Few layer graphene/SiO2/SiC (G/SiO2/SiC) core-layers-sheath nano-heterojunctions were obtained by a new easy and cheap designed procedure by thermal annealing at atmospheric pressure and low temperature on 3C-SiC powder derived from exhausted activated carbon. Recycled SiC was chosen as growth substrate to realize a convenient process and to increase the added value of the recycled, combining the favourable properties of different substances. SiC powder and the advanced materials obtained were carefully characterized by the combining use of different techniques: transmission electron microscopy (TEM) with EDAX probe, scanning electron microscopy (SEM), X-ray diffraction analysis, Raman spectroscopy, thermogravimetric analysis coupled with quadrupole mass detector (TG-DTG-MASS).
Original languageEnglish
Pages (from-to)1525 - 1530
Number of pages6
JournalChemical Engineering Transactions
Volume57
DOIs
Publication statusPublished - 2017
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

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