Nitrogen doped Cu

Claudia Malerba, Cristy Leonor Azanza Ricardo, Mirco Dincau, Francesco Biccari, Paolo Scardi, Alberto Mittiga

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

The optical properties of sputtered Cu2O thin films doped with the nitrogen concentrations between 1 and 2.5 at% have been investigated by spectrophotometric measurements. All the doped samples exhibit two clearly defined absorption bands at energies below the gap, with an intensity well correlated with the N concentration. This result suggests Cu2O as a promising material for the development of intermediate band solar cells, also considering the band gap of about 2 eV which is the optimal value for this kind of devices. Moreover, the sample with the highest doping shows a resistivity of 1.14Ωcm, which is the lowest value ever reported for this semiconductor. As a collateral result, we provide a first estimation of the Relative Sensitivity Factors (RSF) of nitrogen and oxygen atoms underCsbombardment in a Cu2O matrix. © 2012 Elsevier B.V.
Original languageEnglish
Pages (from-to)192 - 195
Number of pages4
JournalSolar Energy Materials and Solar Cells
Volume105
DOIs
Publication statusPublished - Oct 2012

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Cite this

Malerba, C., Azanza Ricardo, C. L., Dincau, M., Biccari, F., Scardi, P., & Mittiga, A. (2012). Nitrogen doped Cu. Solar Energy Materials and Solar Cells, 105, 192 - 195. https://doi.org/10.1016/j.solmat.2012.06.017