A new one-dimensional numerical model of laser induced phase transitions in silicon is presented. In addition to the heat flow phenomena, it includes a first order description of the nucleation and growth of the new grains. The simulations are used to assess both the relevance of different nucleation mechanisms and the numerical values of some fundamental parameters.
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
Mittiga, A., Fornarini, L., & Carluccio, R. (2000). Numerical modeling of laser induced phase transitions in silicon. Applied Surface Science, 154, 112 - 117. https://doi.org/10.1016/S0169-4332(99)00436-5