On the fabrication and characterization of amorphous silicon ultra-violet sensor array

D. Caputo, G. de Cesare, A. Nascetti, M. Tucci

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1 Citation (Scopus)


In this work we present the design and fabrication of a 16 × 16 ultraviolet sensor array, deposited by Plasma Enhanced Chemical Vapor Deposition on glass substrate, suitable for label-free DNA parallel analysis. Each pixel is constituted by two back-to-back series connected coplanar amorphous silicon/amorphous silicon carbide n-i-p diodes. One junction acts as photosensor (with 1.4 × 1.8 mm2area) and the other as switching diode (with 200 × 200 μm2area). The array performances have been optimized as a trade-off between the competitive requirements of the photosensor and of the switching element that have the same n-i-p stacked layers, since they have been deposited during the same deposition run. A responsivity around 60 mA/W in the ultraviolet range and an ON/OFF dark current ratio of six orders of magnitude have been achieved for the photodiode and the switching element, respectively. © 2009 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)6422 - 6425
Number of pages4
JournalThin Solid Films
Issue number23
Publication statusPublished - 1 Oct 2009
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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