In this work we present the design and fabrication of a 16 × 16 ultraviolet sensor array, deposited by Plasma Enhanced Chemical Vapor Deposition on glass substrate, suitable for label-free DNA parallel analysis. Each pixel is constituted by two back-to-back series connected coplanar amorphous silicon/amorphous silicon carbide n-i-p diodes. One junction acts as photosensor (with 1.4 × 1.8 mm2area) and the other as switching diode (with 200 × 200 μm2area). The array performances have been optimized as a trade-off between the competitive requirements of the photosensor and of the switching element that have the same n-i-p stacked layers, since they have been deposited during the same deposition run. A responsivity around 60 mA/W in the ultraviolet range and an ON/OFF dark current ratio of six orders of magnitude have been achieved for the photodiode and the switching element, respectively. © 2009 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Caputo, D., de Cesare, G., Nascetti, A., & Tucci, M. (2009). On the fabrication and characterization of amorphous silicon ultra-violet sensor array. Thin Solid Films, 517(23), 6422 - 6425. https://doi.org/10.1016/j.tsf.2009.02.064