On the morphology of stain-etched porous silicon films

L. Schirone, G. Sotgiu, M. Montecchi

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Abstract

Morphology of stain-etched porous silicon films was investigated by a non-destructive technique, based on reflectance spectrometry: dielectric function profiles were computed by spectral reflectance via a finite difference model, and porosity was deduced by the effective medium approximation. Theoretical calculations were supported by high-resolution electron microscopy observations. The relations among oxidising species concentration in the etching solution, porosity profile and surface reflectance of the films were investigated. © 1999 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)163 - 167
Number of pages5
JournalJournal of Luminescence
Volume80
Issue number1-4
DOIs
Publication statusPublished - 1998

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All Science Journal Classification (ASJC) codes

  • Biophysics
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Biochemistry
  • Condensed Matter Physics

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