On the photoluminescence from Si nanocrystals in Er-doped silica by a double-pulse technique

E. Borsella, M. Falconieri, F. Gourbilleau, R. Rizk

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Abstract

The mechanism of photoluminescence (PL) from Si nanocrystals (Si-nc's) in Er-doped silica is investigated by a double-pulse technique. It is shown that the decay time and the spectral intensity of PL emission from Si-nc's do not change when Si-nc's are reexcited by a delayed pulse in the presence of still excited Er ions. Results are compatible with a strong quenching of photoexcited Si-nc's through trap states and/or Auger-like interaction between Si-nc's and Er ions, both in the excited states, while PL emission originates from excitonic recombination in Si-nc's that do not couple to Er3+. © 2006 American Institute of Physics.
Original languageEnglish
Article number041120
Pages (from-to)-
JournalApplied Physics Letters
Volume89
Issue number4
DOIs
Publication statusPublished - 2006
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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