Porous Silicon was formed on mono- and poly-crystalline Si substrates by stain etching in aqueous HF/HNO3solutions. Optical properties of the resulting films have been investigated by reflectance spectroscopy and have been related to process parameters, e.g. HF, HNO3concentration and etching time. Film morphology has been investigated by High Resolution Electron Microscopy (HREM). Porous Si films allowed to reduce surface reflectance to under 2% in 550-700 nm wavelength range. Efficient anti-reflection coatings were developed and used in large area solar cells: photovoltaic conversion efficiency higher than 12% was obtained by 12.8×12.8 cm2polycrystalline devices under standard AM1.5G simulated sunlight.
|Pages (from-to)||59 - 64|
|Number of pages||6|
|Journal||Solid State Phenomena|
|Publication status||Published - 1997|
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics
Schirone, L., Sotgiu, G., Parisini, A., & Montecchi, M. (1997). Optical and morphological properties of stain-etched Porous Silicon films for anti-reflection coatings of photovoltaic devices. Solid State Phenomena, 54, 59 - 64.