Optical path length factor at near-bandgap wavelengths in Si solar cells

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By using the Rand and Basore (R&B) physical model for light trapping, a particular analytical expression for near-bandgap optical path length factor Zois derived for the case where back surface reflectivity RBACKis equal to unity (RBACK= 1). This expression shows that according to the R&B physical model, at RBACK= 1, Zohas a finite value. At RBACK= 1, the R&B expression for Zois shown to diverge. By using the original R&B derivation procedure, a new expression for Zois obtained, which at RBACK= 1, reduces to the aforementioned particular expression for ideal back surface reflectance. The new expression is immune from the physical incongruity and tendency to overestimate Zothat affect the R&B expression. By using the new expression, a relationship between Zoand the Yablonovitch and Cody (Y&C) absorption-enhancement factor is derived for devices where parasitic absorption predominantly occurs at backside reflector. This relationship is shown to be in agreement with the literature. In the derivation, a connection between the approaches to light trapping of R&B and Y&C is exploited. This connection allows obtaining a new method to evaluate RBACKat near-bandgap wavelengths in most Si solar cells. The new method is checked on two real Si solar cells and found to provide plausible results. Compared to the method used by R&B, the method presented in this paper is shown to be more reliable. © 2006 IEEE.
Original languageEnglish
Pages (from-to)3047 - 3053
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number12
Publication statusPublished - Dec 2006


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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