Optoelectronic properties of OLEDs based on CdSe/ZnS quantum dots and F8BT

C. Borriello, C.T. Prontera, Sh. A. Mansour, S. Aprano, M.G. Maglione, A. Bruno, T. Di Luccio, C. Minarini

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Abstract

We report our work about OLED devices where the emissive layer is based on CdSe/ZnS quantum dots (QDs) combined with poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT) in two different ways: blends at various QDs concentrations and sequential deposition of QDs and F8BT layers. The fluorescence of the blends presents a wide emission in the range (500-700) nm due to the combination of fluorescence by the polymer (maximum at 540 nm) and QDs (maximum at 634 nm). Among the layered structures, the fluorescence emission by the QDs substantially contributes to the spectrum only for the F8BT/QDs bilayer. The OLEDs devices realized with the blend at 15 wt% of QDs show the highest luminance respect to all the devices, and threshold voltage values similar to the neat polymer device.
Original languageEnglish
Pages (from-to)1416 - 1420
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume12
Issue number12
DOIs
Publication statusPublished - 1 Dec 2015

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

Borriello, C., Prontera, C. T., Mansour, S. A., Aprano, S., Maglione, M. G., Bruno, A., ... Minarini, C. (2015). Optoelectronic properties of OLEDs based on CdSe/ZnS quantum dots and F8BT. Physica Status Solidi (C) Current Topics in Solid State Physics, 12(12), 1416 - 1420. https://doi.org/10.1002/pssc.201510162