Phase stability for the in situ growth of Nd

C. Cantoni, D.P. Norton, D.M. Kroeger, M. Paranthaman, D.K. Christen, D. Verebelyi, R. Feenstra, D.F. Lee, E.D. Specht, V. Boffa, S. Pace

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We have determined the stability line in the 1/T-log[P(O2)] phase space for the synthesis of Nd1+xBa2-xCu3Oy(NdBCO) films. A systematic study of Tc, Jc, and ρ(T) dependence on oxygen partial pressure and temperature for the deposition of thin NdBCO films grown by pulsed-laser deposition was performed. The conditions for optimal NdBCO film growth were determined by varying oxygen partial pressure from 0.02 to 400 mTorr, and substrate temperature between 730 and 800 °C. The results show that the best NdBCO films are obtained at oxygen pressures in the range of 0.2-1.2 mTorr, depending on the substrate temperature. This is more than two orders-of-magnitude lower than the correspondent oxygen pressure appropriate for YBa2Cu3O7-δfilm growth. © 1999 American Institute of Physics.
Original languageEnglish
Pages (from-to)96 - 98
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 1999
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cantoni, C., Norton, D. P., Kroeger, D. M., Paranthaman, M., Christen, D. K., Verebelyi, D., ... Pace, S. (1999). Phase stability for the in situ growth of Nd. Applied Physics Letters, 74(1), 96 - 98.