We have determined the stability line in the 1/T-log[P(O2)] phase space for the synthesis of Nd1+xBa2-xCu3Oy(NdBCO) films. A systematic study of Tc, Jc, and ρ(T) dependence on oxygen partial pressure and temperature for the deposition of thin NdBCO films grown by pulsed-laser deposition was performed. The conditions for optimal NdBCO film growth were determined by varying oxygen partial pressure from 0.02 to 400 mTorr, and substrate temperature between 730 and 800 °C. The results show that the best NdBCO films are obtained at oxygen pressures in the range of 0.2-1.2 mTorr, depending on the substrate temperature. This is more than two orders-of-magnitude lower than the correspondent oxygen pressure appropriate for YBa2Cu3O7-δfilm growth. © 1999 American Institute of Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)