The Ge(111) surface has been studied by photoemission and photoabsorption spectroscopies as a function of temperature up to 1200 K. Up to 1020 K the data indicate the presence of an adatom-restatom reconstruction, with a gradual weak metallization of the surface between 600 and 1020 K. Evidence for a high-temperature phase transition is found between 1020 and 1085 K from core-level spectroscopy. Valence-band photoemission spectra and photoabsorption data indicate a metallic surface layer above this phase transition. About 0.7-1 atomic bilayer is estimated to undergo the semiconductor to metal transition. All these data can be interpreted consistently with an incomplete surface-melting scenario. © 1997 Elsevier Science B.V.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Goldoni, A., Santoni, A., Sancrotti, M., Dhanak, V. R., & Modesti, S. (1997). Photoemission and photoabsorption study of the high-temperature phases of the Ge(111) surface. Surface Science, 382(1-3), 336 - 348. https://doi.org/10.1016/S0039-6028(97)00207-0