Photoluminescence of Ge islands grown by Ultra High Vacuum-Chemical Vapour Deposition on Si(100)

M. Cremona, F. Racedo N, R. Larciprete, P.L. Souza

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Abstract

In this work different Ge on Si samples have been investigated with respect to their morphology and optical properties. Ge films were deposited on Si(100) by Ultra High Vacuum-Chemical Vapour Deposition from GeH4, at substrate temperature between 325-450°C. The films were without cap layer. Microscopic characterization showed that the Ge layers had a clustered morphology determined by the Stranski-Krastanov modality. These samples excited at 12 K by an Ar+laser exhibited a photoluminescence (PL) band centered at 0.85 eV, which closely resembled the island-related feature observed for Ge dots embedded in Si. The PL spectra as a function of temperature is presented and discussed in terms of the morphological characteristics of the different samples.
Original languageEnglish
Pages (from-to)181 - 184
Number of pages4
JournalBrazilian Journal of Physics
Volume27
Issue number4
Publication statusPublished - Dec 1997
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Cremona, M., Racedo N, F., Larciprete, R., & Souza, P. L. (1997). Photoluminescence of Ge islands grown by Ultra High Vacuum-Chemical Vapour Deposition on Si(100). Brazilian Journal of Physics, 27(4), 181 - 184.