In this work different Ge on Si samples have been investigated with respect to their morphology and optical properties. Ge films were deposited on Si(100) by Ultra High Vacuum-Chemical Vapour Deposition from GeH4, at substrate temperature between 325-450°C. The films were without cap layer. Microscopic characterization showed that the Ge layers had a clustered morphology determined by the Stranski-Krastanov modality. These samples excited at 12 K by an Ar+laser exhibited a photoluminescence (PL) band centered at 0.85 eV, which closely resembled the island-related feature observed for Ge dots embedded in Si. The PL spectra as a function of temperature is presented and discussed in terms of the morphological characteristics of the different samples.
|Pages (from-to)||181 - 184|
|Number of pages||4|
|Journal||Brazilian Journal of Physics|
|Publication status||Published - Dec 1997|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cremona, M., Racedo N, F., Larciprete, R., & Souza, P. L. (1997). Photoluminescence of Ge islands grown by Ultra High Vacuum-Chemical Vapour Deposition on Si(100). Brazilian Journal of Physics, 27(4), 181 - 184.