Physical properties evolution of sputtered zirconium oxynitride films: Effects of the growth temperature

A. Rizzo, M.A. Signore, L. Mirenghi, E. Piscopiello, L. Tapfer

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Zirconium oxynitride (ZrNO) films were deposited by RF reactive magnetron sputtering in water vapour-nitrogen atmosphere varying the deposition temperature from RT to 600 °C. Optical analysis, x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) are the employed characterization techniques to investigate the influence of the substrate temperature on the films physical properties. It was found that the variation of the substrate temperature from RT to 600 °C caused a structural transition from cubic phase of Zr2ON2 to ZrN one, as confirmed by TEM observations too. In particular, Forouhi-Bloomer dispersion equations for optical parameters (n and k) and deconvolution of XPS spectra allowed further chemical properties be elucidated. They also permitted identification of two oxynitride phases, γ phase (Eg = 1.94 eV) and β phase (Eg = 1.7 eV), and an over-stoichiometric nitride one. The use of [Ec - Ev] values helped to confirm further the distinction between (γ, β)-phases and N-rich zirconium nitride compound, which is unachievable by using only Eg values. © 2009 IOP Publishing Ltd.
Original languageEnglish
Article number235401
Pages (from-to)-
JournalJournal Physics D: Applied Physics
Issue number23
Publication statusPublished - 2009
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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