Physical properties of P and B doped microcrystalline Si:H deposited by PECVD

A. Rubino, M.L. Addonizio, G. Conte, G. Nobile, E. Terzini, A. Madan

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Abstract

Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. We report conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 °C. The conductivity as well as the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor (σ0) as well as the conductivity (σ) itself as a function of the activation energy (Ea) show a slope inversion for both n and p materials at an activation energy of about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data.
Original languageEnglish
Publication statusPublished - 1993
EventProceedings of the MRS Spring Meeting - , Unknown
Duration: 1 Jan 1993 → …

Conference

ConferenceProceedings of the MRS Spring Meeting
CountryUnknown
Period1/1/93 → …

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Rubino, A., Addonizio, M. L., Conte, G., Nobile, G., Terzini, E., & Madan, A. (1993). Physical properties of P and B doped microcrystalline Si:H deposited by PECVD. Paper presented at Proceedings of the MRS Spring Meeting, Unknown.