Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. We report conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 °C. The conductivity as well as the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor (σ0) as well as the conductivity (σ) itself as a function of the activation energy (Ea) show a slope inversion for both n and p materials at an activation energy of about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data.
|Publication status||Published - 1993|
|Event||Proceedings of the MRS Spring Meeting - , Unknown|
Duration: 1 Jan 1993 → …
|Conference||Proceedings of the MRS Spring Meeting|
|Period||1/1/93 → …|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
Rubino, A., Addonizio, M. L., Conte, G., Nobile, G., Terzini, E., & Madan, A. (1993). Physical properties of P and B doped microcrystalline Si:H deposited by PECVD. Paper presented at Proceedings of the MRS Spring Meeting, Unknown.