Plasma dry etching for selective emitter formation in crystalline silicon based solar cell

Mario Tucci, Luca Serenelli, Alberto Del Bono, Massimo Izzi, Luisa Pirozzi, Pierino Martufi, Annunziata Sanseverino

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Selective emitter formation in silicon based solar cell is recently becoming a common technique to enhance the blue response of solar cell. In this work, we suggest a novel procedure based on a self alignment thought to overcome the realignment problems that still limit its industrial request. The idea is based on a plasma dry etching procedure of the emitter region using the metal grid of the cell as a mask. In particular the plasma etching can reduce the thickness of a homogeneous heavily doped emitter reducing both doping concentration and sheet resistance. Since there is no necessity of realignment step in the proposed selective emitter fabrication process it can be useful and appealing for industrial PV manufacturing. © 2008 IEEE.
Original languageEnglish
DOIs
Publication statusPublished - 2008
Event2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - , Australia
Duration: 1 Jan 2008 → …

Conference

Conference2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
CountryAustralia
Period1/1/08 → …

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Tucci, M., Serenelli, L., Bono, A. D., Izzi, M., Pirozzi, L., Martufi, P., & Sanseverino, A. (2008). Plasma dry etching for selective emitter formation in crystalline silicon based solar cell. Paper presented at 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Australia. https://doi.org/10.1109/COMMAD.2008.4802145