We present and discuss advances in the development of p-type Si heterojunction solar cells with Al-doped ZnO (AZO) on both front and rear side, by means of mixed-phase Si- and SiOx-based doped layers. We demonstrate that while rear AZO can be deleterious when using p-type amorphous silicon (a-Si:H), p-type microcrystalline silicon (μc-Si:H) allows for: (1) suppression of the p-layer/AZO Schottky-like barrier, (2) relevant Vocincrease, and (3) improved transport and extraction of carriers. In contrast, Vocreduction and increased low-injection recombination is observed with n-type μc-Si:H in conjunction with AZO, likely due to the low defect density of the material which entails severe depletion effects. These issues are avoided with the more defective mixed-phase n-SiOx, which additionally provides for reduced parasitic absorption losses and is thus established as the optimal emitter choice.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
Mercaldo, L. V., Bobeico, E., Usatii, I., Della Noce, M., Lancellotti, L., Serenelli, L., Izzi, M., Tucci, M., & Delli Veneri, P. (2017). Potentials of mixed-phase doped layers in p-type Si heterojunction solar cells with ZnO:Al. Solar Energy Materials and Solar Cells, 169, 113 - 121. https://doi.org/10.1016/j.solmat.2017.05.014