Potentials of mixed-phase doped layers in p-type Si heterojunction solar cells with ZnO:Al

Lucia V. Mercaldo, Eugenia Bobeico, Iurie Usatii, Marco Della Noce, Laura Lancellotti, Luca Serenelli, Massimo Izzi, Mario Tucci, Paola Delli Veneri

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8 Citations (Scopus)

Abstract

We present and discuss advances in the development of p-type Si heterojunction solar cells with Al-doped ZnO (AZO) on both front and rear side, by means of mixed-phase Si- and SiOx-based doped layers. We demonstrate that while rear AZO can be deleterious when using p-type amorphous silicon (a-Si:H), p-type microcrystalline silicon (μc-Si:H) allows for: (1) suppression of the p-layer/AZO Schottky-like barrier, (2) relevant Vocincrease, and (3) improved transport and extraction of carriers. In contrast, Vocreduction and increased low-injection recombination is observed with n-type μc-Si:H in conjunction with AZO, likely due to the low defect density of the material which entails severe depletion effects. These issues are avoided with the more defective mixed-phase n-SiOx, which additionally provides for reduced parasitic absorption losses and is thus established as the optimal emitter choice.
Original languageEnglish
Pages (from-to)113 - 121
Number of pages9
JournalSolar Energy Materials and Solar Cells
Volume169
DOIs
Publication statusPublished - 1 Sep 2017

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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