Preparation method of double-textured ZnO:B films deposited by MOCVD on plasma etched polymer buffer

M.L. Addonizio, L. Fusco

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

With the aim of enhancing light trapping phenomenon in PV thin film silicon devices, a method has been developed to produce highly textured TCO surfaces by the growth of ZnO:B on a buffer layer consisting of UV-cured highly transparent acrylic polymer (IBA) whose surface had been modified by RIE process. Different RIE etching conditions, particularly RF-power and process duration, have been used to obtain different polymer surface modifications. The effect of different treatment conditions on polymer surface has been systematically investigated and subsequently correlated to the properties of ZnO:B films deposited by MOCVD on these modified polymer surfaces. The surface morphology of zinc oxide film, growth on IBA buffer layer, changed from conventional pyramid-like single-texture to cauliflower-like double-texture. The morphology of double-textured ZnO strongly depended on the surface properties of the etched polymer. Excellent scattering properties were obtained and at the wavelength of 800 nm the haze value increased from 7.5% (pyramidal-like single-texture ZnO layer on glass) to 68% (double textured ZnO film obtained on etched IBA, treated for 20 min at RF-power of 80 W). The RMS roughness showed similar behaviour: it increased at the increasing of the etching time and the highest value of 160 nm was obtained for cauliflower-like ZnO:B film. Good electrical properties were maintained for double-textured ZnO:B films with excellent scattering properties.
Original languageEnglish
Pages (from-to)851 - 858
Number of pages8
JournalJournal of Alloys and Compounds
Volume622
DOIs
Publication statusPublished - 15 Feb 2015

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys

Cite this