Producción y tratamiento de películas de Si

J. Castro, S. Chiussi, J. Serra, B. León, M. Pérez-Amor, S. Martelli, R. Larciprete, N. Frangis

Research output: Contribution to journalArticle

Abstract

Heterostructures of Si1-xGexalloys on Si (100) have been achieved using two different excimer laser techniques. The first one, the Laser Induced Chemical Vapour Deposition (LCVD), was used in order to deposit germanium on Si (100) substrates via photolysis of GeH4as precursor gas. The resulting films show a very homogeneous and amorphous structure as determined by HREM, XRD and Raman analysis. These deposited amorphous germanium films and a part of their underlaying Si (100) substrate were melted using the second technique, the Pulsed Laser Induced Epitaxy (PLIE), inducing an epitactic recrystallization of a Si-Ge alloy. The analysis of the obtained alloys by HREM, XRD, and XPS, reveals a strong dependence of the crystal quality and of the germanium concentration profile from the number of pulses.
Original languageFrench
Pages (from-to)78 - 81
Number of pages4
JournalRevista de Metalurgia
Volume34
Issue number2
Publication statusPublished - 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Metals and Alloys
  • Materials Chemistry

Cite this

Castro, J., Chiussi, S., Serra, J., León, B., Pérez-Amor, M., Martelli, S., ... Frangis, N. (1998). Producción y tratamiento de películas de Si. Revista de Metalurgia, 34(2), 78 - 81.