Properties of Epitaxial Yba2Cu3Oy thin Films on Sapphire with Prba2Cu3Oy Buffer Layers

V. Boffa, G. Paternò, C. Romeo, V. Rossi, M. Penna, D. Di Gioacchino, U. Gambardella, S. Barbanera, F. Murtas

Research output: Contribution to journalLetter

3 Citations (Scopus)

Abstract

We have grown YBa2Cu3Oy epitaxial thin films on a PrBa2Cu3Oy layer deposited on a sapphire substrate. The laser ablation technique with an XeCl excimer laser was used for both depositions. The films were deposited in situ by means of a rotating multi-target system carrying the two targets. The substrate holder was heated by a CO2 laser beam. The as deposited films show a zero resistance critical temperature of 87 K and a high degree of epitaxiality with c-axis orientation. The samples have been patterned in the shape of strips of variable width between l0μm and 30μm. D. C. transport critical current densities of YBa2Cu3Oy grown on PrBa2Cu3Oy/Al2O3 have been measured as a function of the temperature and an applied magnetic field. © 1993 IEEE
Original languageEnglish
Pages (from-to)1068 - 1069
Number of pages2
JournalIEEE Transactions on Applied Superconductivity
Volume3
Issue number1
DOIs
Publication statusPublished - 1993
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Boffa, V., Paternò, G., Romeo, C., Rossi, V., Penna, M., Gioacchino, D. D., ... Murtas, F. (1993). Properties of Epitaxial Yba2Cu3Oy thin Films on Sapphire with Prba2Cu3Oy Buffer Layers. IEEE Transactions on Applied Superconductivity, 3(1), 1068 - 1069. https://doi.org/10.1109/77.233885