The formation and characterization of MgB2thin films is explored, using room-temperature deposition of precursor layers and subsequent annealing in-situ. Precursors were deposited by means of pulsed laser deposition (PLD), electron beam (EB), and sputtering (SD) techniques. Best results were obtained for B/Mg multilayers deposited by EB and annealed at 630 °C for 10 minutes, snowing typical TConand TC0values of about 32-34 K and 31-32 K, respectively. Structural and morphological analyses were performed by x-ray diffraction and SEM. A comparison among the different growth techniques is presented. Results are explained taking into account the pressure-temperature phase diagram of the Mg-B system.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering