Polysilicon thin films have been obtained by Solid Phase Crystallization from device quality PECVD amorphous silicon deposited on Qz (fused silica) substrates. Different substrate temperatures and He or H2 dilution of SiH4 have been utilized in order to change hydrogen content and microstructure of a-Si:H starting material. Isothermal annealing has been performed under vacuum at the temperature of 650 °C. Optical, electrical and structural properties of as-deposited and crystallized material have been evaluated. A crystalline fraction determination technique, based on UV reflectance spectra, has been set up. Different crystallization kinetics have been observed depending on a-Si:H total hydrogen concentration and relative abundance of Si-H and Si-Hx bonds, a-Si:H materials, showing mainly Si-H bonds, have longer crystallization time leading to a polysilicon film with an average grain size of about 0.5 μm.
|Pages (from-to)||199 - 204|
|Number of pages||6|
|Journal||Diffusion and Defect Data Pt.B: Solid State Phenomena|
|Publication status||Published - 1999|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
Addonizio, M. L., Delli Veneri, P., Fameli, G., Loreti, S., Minarini, C., Privato, C., ... Vancini, M. (1999). Properties of poly-Si obtained by Solid Phase Crystallization of differently produced a-Si:H thin films. Diffusion and Defect Data Pt.B: Solid State Phenomena, 67, 199 - 204.