We introduce the pulsed ruby laser as a new tool for homogenous accelerated degradation of a-Si:H and discuss in detail the sample temperature during the ruby pulse and the value of the saturated density of states (DOS), achieved by this laser. The degradation dynamics and the saturated values of the DOS and electrical room temperature conductivity (σRT) are presented on a set of different undoped a-Si:H samples. It is illustrated that there is no correlation between the initial and light-saturated DOS, which is determined in addition to the H content and the a-Si:H microstructure indirectly also by impurities. © 1993.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry
Klíma, O., Štika, O., Ha, H. T., Fouad Abdel Hamied, S., Stuchlík, J., Rubino, A., & Kočka, J. (1993). Pulsed ruby laser accelerated degradation of amorphous hydrogenated silicon. Journal of Non-Crystalline Solids, 164-166(PART 1), 235 - 238. https://doi.org/10.1016/0022-3093(93)90534-5