Radiation damage effects in Silicon Photo-Multipliers

M. Andreotti, W. Baldini, R. Calabrese, G. Cibinetto, A. Cotta Ramusino, C. Dedonato, M. Fiorini, E. Luppi, R. Malaguti, A. Montanari, A. Pietropaolo, V. Santoro, G. Tellarini, L. Tomassetti, N. Tosi

Research output: Contribution to conferencePaper

Abstract

In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenti-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium on a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2×109neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, like dark current and charge spectra, has been observed. An extensive comparison of the performances of all the devices will be presented. © 2013 IEEE.
Original languageEnglish
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 60th IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013 - , Korea, Republic of
Duration: 1 Jan 2013 → …

Conference

Conference2013 60th IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013
CountryKorea, Republic of
Period1/1/13 → …

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All Science Journal Classification (ASJC) codes

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

Cite this

Andreotti, M., Baldini, W., Calabrese, R., Cibinetto, G., Ramusino, A. C., Dedonato, C., ... Tosi, N. (2013). Radiation damage effects in Silicon Photo-Multipliers. Paper presented at 2013 60th IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2013, Korea, Republic of. https://doi.org/10.1109/NSSMIC.2013.6829721