The present study faces the radiation tolerance aspect for two main device categories typically used for power supplies of electromagnetic calorimeters for high-energy physics, like ATLAS Liquid-Ar calorimeters: 200V-MOSFETs and 30V-MOSFETs, which are fundamental for manipulating the primary voltage and the secondary voltage, respectively, of the power distribution system. Results demonstrate that the gate driving policy can significantly affect the radiation tolerance of such devices, suggesting a promising method to reach the 1 Mrad target. © 2010 by World Scientific Publishing Co. Pte. Ltd.
|Publication status||Published - 2010|
|Event||11th International Conferences on Advanced Technology and Particle Physics, ICATTP 2009 - , Italy|
Duration: 1 Jan 2010 → …
|Conference||11th International Conferences on Advanced Technology and Particle Physics, ICATTP 2009|
|Period||1/1/10 → …|
All Science Journal Classification (ASJC) codes
- Astronomy and Astrophysics
- Nuclear and High Energy Physics
Abbate, C., Busatto, G., Iannuzzo, F., Porzio, A., Sanseverino, A., Velardi, F., & Baccaro, S. (2010). Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters. Paper presented at 11th International Conferences on Advanced Technology and Particle Physics, ICATTP 2009, Italy.