Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters

C. Abbate, G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, S. Baccaro

Research output: Contribution to conferencePaper

Abstract

The present study faces the radiation tolerance aspect for two main device categories typically used for power supplies of electromagnetic calorimeters for high-energy physics, like ATLAS Liquid-Ar calorimeters: 200V-MOSFETs and 30V-MOSFETs, which are fundamental for manipulating the primary voltage and the secondary voltage, respectively, of the power distribution system. Results demonstrate that the gate driving policy can significantly affect the radiation tolerance of such devices, suggesting a promising method to reach the 1 Mrad target. © 2010 by World Scientific Publishing Co. Pte. Ltd.
Original languageEnglish
Publication statusPublished - 2010
Externally publishedYes
Event11th International Conferences on Advanced Technology and Particle Physics, ICATTP 2009 - , Italy
Duration: 1 Jan 2010 → …

Conference

Conference11th International Conferences on Advanced Technology and Particle Physics, ICATTP 2009
CountryItaly
Period1/1/10 → …

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All Science Journal Classification (ASJC) codes

  • Astronomy and Astrophysics
  • Nuclear and High Energy Physics

Cite this

Abbate, C., Busatto, G., Iannuzzo, F., Porzio, A., Sanseverino, A., Velardi, F., & Baccaro, S. (2010). Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters. Paper presented at 11th International Conferences on Advanced Technology and Particle Physics, ICATTP 2009, Italy.