In this study, TiO2thin films were fabricated by radio frequency sputtering at room temperature in pure Ar atmosphere starting from a 6 in. TiO2target. The thickness of the films was controlled by deposition time and the effect of Ar sputtering pressure on the characteristics of TiO2thin films was evaluated. Surface morphology and optical properties of TiO2films were investigated using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and UV–Vis spectrophotometry. Also, the refractive index and extinction coefficient of films were inferred by fitting spectrophotometric data. Schottky diode were fabricated by evaporation of Ni on TiO2films. Current-voltage (I-V) measurements of Ni/TiO2films showed that the rectifying properties of the device improves with the increasing of TiO2film density and thickness. Therefore, the best I-V characteristic of the device was investigated depending on the temperature. Also, Ni/n-TiO2/p-Si/Al devices were fabricated to understand their transport mechanism.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry