Sensitivity of porous silicon photoluminescence to low concentrations of CH

G.D.I. Francia, V.L.A. Ferrara, L. Quercia, G. Faglia

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21 Citations (Scopus)


In this paper we report the sensitivity of porous silicon photoluminescence (PL) to diluted mixtures of methane and carbon monoxide in synthetic air. We also investigate the separate effect of synthetic air, purified nitrogen and relative humidity on both photoluminescence and conductance (G). Porous silicon samples have been prepared from n-type silicon substrates. We find that PL intensity and G decrease in synthetic air with respect to their values in N2. Presence of carbon monoxide reduces the PL intensity while methane provokes the opposite behaviour. The dependence of the PL spectra on methane and carbon monoxide concentrations has been investigated. The observed effects can be related to gas induced modifications in porous surface and suggest that porous silicon can be employed in gas sensor technology.
Original languageEnglish
Pages (from-to)287 - 290
Number of pages4
JournalJournal of Porous Materials
Issue number1
Publication statusPublished - 2000


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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