Silicon-carbon films deposited at low substrate temperature

G. Ambrosone, U. Coscia, S. Lettieri, P. Maddalena, M. Della Noce, S. Ferrero, S. Restello, V. Rigato, M. Tucci

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Abstract

Films composed of Si crystallites embedded in an amorphous silicon-carbon matrix have been deposited at low temperature by PECVD onto Corning glass and SnO2:F coated glass substrates. An increase of RF power from 15 to 100 W reduces the silicon crystalline fraction and enhances the carbon content in the amorphous material, causing the crystalline to amorphous phase transition. SnO2coated glass substrate enhances the nucleation of silicon grains and the optical absorbance in the wavelength range of ≈300-1000 nm decreases with increasing the RF power. © 2006 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1371 - 1375
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume352
Issue number9-20 SPEC. ISS.
DOIs
Publication statusPublished - 15 Jun 2006

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Ambrosone, G., Coscia, U., Lettieri, S., Maddalena, P., Noce, M. D., Ferrero, S., ... Tucci, M. (2006). Silicon-carbon films deposited at low substrate temperature. Journal of Non-Crystalline Solids, 352(9-20 SPEC. ISS.), 1371 - 1375. https://doi.org/10.1016/j.jnoncrysol.2005.10.041