Silicon nanowires grown on Si(1 0 0) substrates via thermal reactions with carbon nanoparticles

S. Botti, R. Ciardi, R. Larciprete, A. Goldoni, L. Gregoratti, B. Kaulich, M. Kiskinova

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Abstract

The effect of thermal processing at 1050 °C of a dispersed film of carbon nanoparticles deposited on a Si substrate with a native SiO2layer has been studied by scanning electron microscopy and scanning photoelectron spectromicroscopy. It has been found that the thermal processing results in formation of pyramidal-shaped defects of 2-7 μm with strongly reduced SiO2content with silicon wires of diameter ranging between 30 and 50 nm decorating the pyramid walls. The nucleation of the Si nanowires occurs via reduction of the native oxide layer by the nanosized carbon particles, without the need of metal catalysts and at temperatures relatively lower than that used in similar techniques. © 2003 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)394 - 400
Number of pages7
JournalChemical Physics Letters
Volume371
Issue number3-4
DOIs
Publication statusPublished - 7 Apr 2003
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Botti, S., Ciardi, R., Larciprete, R., Goldoni, A., Gregoratti, L., Kaulich, B., & Kiskinova, M. (2003). Silicon nanowires grown on Si(1 0 0) substrates via thermal reactions with carbon nanoparticles. Chemical Physics Letters, 371(3-4), 394 - 400. https://doi.org/10.1016/S0009-2614(03)00090-3