We propose the use of n-doped silicon oxide as alternative n-layer in thin film Si p-i-n solar cells. By varying input gas ratios, films with a wide range of optical and electrical properties are obtained. Applying these layers in solar cells, good electrical and optical properties are demonstrated. A relative efficiency increase up to 13.6% has been observed on the cells adopting a simple Ag back contact. A similar spectral response as with the cell with standard n-layer plus ZnO/Ag back contact is obtained. The deposition of a buffer layer at the back contact can therefore be avoided. © 2010 American Institute of Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Delli Veneri, P., Mercaldo, L. V., & Usatii, I. (2010). Silicon oxide based n-doped layer for improved performance of thin film silicon solar cells. Applied Physics Letters, 97(2), -. . https://doi.org/10.1063/1.3463457