Silicon oxide based n-doped layer for improved performance of thin film silicon solar cells

Paola Delli Veneri, Lucia V. Mercaldo, Iurie Usatii

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Abstract

We propose the use of n-doped silicon oxide as alternative n-layer in thin film Si p-i-n solar cells. By varying input gas ratios, films with a wide range of optical and electrical properties are obtained. Applying these layers in solar cells, good electrical and optical properties are demonstrated. A relative efficiency increase up to 13.6% has been observed on the cells adopting a simple Ag back contact. A similar spectral response as with the cell with standard n-layer plus ZnO/Ag back contact is obtained. The deposition of a buffer layer at the back contact can therefore be avoided. © 2010 American Institute of Physics.
Original languageEnglish
Article number023512
Pages (from-to)-
JournalApplied Physics Letters
Volume97
Issue number2
DOIs
Publication statusPublished - 12 Jul 2010

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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