The junction space-charge region (JSCR) is modeled as a separate region with carrier recombination at the surface and in the bulk. Bulk recombination is modeled according to the idealized model of C. T. Sah, R. N. Noyce, and W. Shockley [Proc. IRE45, 1228 (1957)]. JSCR surface recombination is modeled by combining at high biases the approaches of A. S. Grove [Physics and Technology of Semiconductor Devices (Wiley, New York, 1967), pp. 301-302] and of C. H. Henry, R. A. Logan, and F. R. Merrit [J. Appl. Phys. 49, 3530 (1978)]. In the treatment, it is assumed that the densities of states in the bulk and at the surface are related to each other. The transport equations are solved in JSCR at high biases and an expression for the JSCR recombination current is obtained. The model is adjusted for Si emitters and diodes, in such a way that it agrees with the numerical simulation program PC1D at all voltages. © 2005 American Institute of Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)