A wide gap amorphous silicon layer, grown by low temperature plasma enhanced chemical vapour deposition on a GaAs substrate, has been utilised as the anode region in a heterojunction pin diode. The device shows good rectifying characteristics and a reverse breakdown voltage of 120 V. The experimental characteristics of the device have been compared to those calculated by a physics based device simulator which takes into account the high defect density typical of amorphous material. Thanks to the good agreement between experiment and theory, the simulator can help to understand in more detail what the effect is of these gap-states on the behaviour of such a heterojunction. Finally, the application of this heterojunction to a GaAs-based n-p-n bipolar transistor is considered. © 1998 Elsevier Science Ltd. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Della Corte, F. G., Rubino, A., & Cocorullo, G. (1998). Simulation study and realisation of an a-Si:H emitter on GaAs. Solid-State Electronics, 42(10), 1819 - 1825. https://doi.org/10.1016/S0038-1101(98)00153-1