Due to its exceptional physical properties, synthetic diamond is an ideal material for the realization of UV and X-ray detectors to be used for the characterization of laser-generated plasmas. Diamond detectors are able to operate at high temperatures and in the presence of high fluxes of ionizing radiation, where traditional silicon-based detectors usually fail. In this paper, we report on Raman and electro-optical characterization of a structure consisting of intrinsic diamond/boron-doped diamond homoepitaxially grown by chemical vapor deposition onto a commercial high pressure high temperature Ib-type diamond substrate using a 1% CH4/H2 gas mixture. A metal-insulator-semiconductor (MIS) diode was obtained by thermally evaporating an aluminum contact on the growth surface of the intrinsic layer. The detection capability of this device operating in transverse configuration was measured in the deep UV spectral range. The device sensitivity has been estimated at different biasing voltages and at two wavelengths having different penetration depths into the material. The device was also tested at zero biasing voltage (photovoltaic mode operation), showing quite a good photoresponse. These results suggest that MIS structures based on high-quality homoepitaxial diamonds may be successfully utilized for photodetection even at zero bias.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Materials Science(all)
- Condensed Matter Physics