Solid-state pressureless sintering of silicon carbide below 2000°C

Giuseppe Magnani, Giuliano Sico, Alida Brentari, Paride Fabbri

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21 Citations (Scopus)


To date, solid-state pressureless sintering of silicon carbide powder requires sintering aids and high sintering temperature (>2100. °C) in order to achieve high sintered density (>95% T.D.). Two-step sintering (TSS) method can allow to set sintering temperature lower than that conventionally required. So, pressureless two-step sintering process was successfully applied for solid-state sintering (boron carbide and carbon as sintering additives) of commercial SiC powder at 1980. °C. Microstructure and mechanical properties of TSS-SiC were evaluated and compared to those obtained with the conventional sintering (SSiC) process performed at 2130. °C. TSS-SiC showed finer microstructure and higher flexural strength than SSiC with very similar density (98.4% T.D. for TSS-SiC and 98.6% T.D. for SSiC). © 2014 Elsevier Ltd.
Original languageEnglish
Pages (from-to)4095 - 4098
Number of pages4
JournalJournal of the European Ceramic Society
Issue number15
Publication statusPublished - 2014
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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