Sputtered WO

D. Valerini, S. Hernández, F. Di Benedetto, N. Russo, G. Saracco, A. Rizzo

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Tungsten oxide films with different thickness were grown by sputtering deposition. Analysis of sample morphology showed that the films were constituted by sub-micrometric columnar structures, with diameters in the range 100-500 nm. As-deposited films revealed an almost-amorphous crystal structure and a wide optical band-gap of about 3.28 eV. Thermal annealing at 500 °C was used to promote the formation of a monoclinic WO3crystal structure and the reduction of the band-gap. Photo-electrochemical characterizations were used to compare the responses of the different films and to evaluate their possible use in water splitting applications.
Original languageEnglish
Pages (from-to)150 - 154
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume42
DOIs
Publication statusPublished - 1 Feb 2016
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Valerini, D., Hernández, S., Di Benedetto, F., Russo, N., Saracco, G., & Rizzo, A. (2016). Sputtered WO. Materials Science in Semiconductor Processing, 42, 150 - 154. https://doi.org/10.1016/j.mssp.2015.09.013