We investigate the interaction of a microcrack and an inclusion in monocrystal β-SiC under plane strain loading condition. By means of molecular dynamics simulations we are able to represent properly the mechanical loads and to calculate the stress and strain fields when the distance of the microcrack and the inclusion is varied. When the crack-inclusion distance is large respect to the dimension of the isolated defects our results are consistent with the basic results of the linear elastic fracture mechanics, and provide a deeper insight at the nanoscale. At small crack-inclusion distances the stress and strain fields are not additive respect to the isolated microcrack and inclusion and we calculate such a defect of linearity. We find power law dependence of the stress and strain defect of linearity on the relative distance of the microcrack and the inclusion.
|Publication status||Published - 2005|
|Event||11th International Conference on Fracture 2005, ICF11 - , Italy|
Duration: 1 Jan 2005 → …
|Conference||11th International Conference on Fracture 2005, ICF11|
|Period||1/1/05 → …|
All Science Journal Classification (ASJC) codes
- Geotechnical Engineering and Engineering Geology
Mattoni, A., Ippolito, M., Colombo, L., & Cleri, F. (2005). Stress and strain fields of a crack-inclusion pair in β-SiC: An atomistic investigation of nonlinearity effects. Paper presented at 11th International Conference on Fracture 2005, ICF11, Italy.