Strong reduction of field-dependent microwave surface resistance in YBa

N. Pompeo, R. Rogai, E. Silva, A. Augieri, V. Galluzzi, G. Celentano

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Abstract

We observe a strong reduction of the field induced thin film surface resistance measured at high microwave frequency (=47.7 GHz) in Y Ba2 Cu3 O7-δ thin films grown on SrTi O3 substrates, as a consequence of the introduction of submicrometric BaZr O3 particles. The field increase of the surface resistance is smaller by a factor of ∼3 in the film with BaZr O3 inclusions, while the zero-field properties are not much affected. Combining surface resistance and surface reactance data, we conclude (a) that BaZr O3 inclusions determine very deep and steep pinning wells and (b) that the pinning changes nature with respect to the pure film. © 2007 American Institute of Physics.
Original languageEnglish
Article number182507
Pages (from-to)-
JournalApplied Physics Letters
Volume91
Issue number18
DOIs
Publication statusPublished - 2007
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Pompeo, N., Rogai, R., Silva, E., Augieri, A., Galluzzi, V., & Celentano, G. (2007). Strong reduction of field-dependent microwave surface resistance in YBa. Applied Physics Letters, 91(18), -. [182507]. https://doi.org/10.1063/1.2803856