The structural and luminescent properties of nanocrystalline silicon produced by high-energy ball milling of Si single crystals have been investigated using transmission electron microscopy (TEM), x-ray diffraction (XRD) and cathodoluminescence (CL) in a scanning electron microscope. XRD measurements show that the average size of the nanocrystals in the milled samples is about 30 nm but TEM reveals a wide range of size distribution including crystallites with the dimension of few nanometres. Ball milling causes the appearance of a visible luminescence band at 1.61 eV, attributed to the presence of nanocrystals, and a near-infrared band peaked at about 0.79 eV which is suggested to be related to the high density of extended defects formed during the mechanical treatment. These bands, attributed to processes in Si, are not observed in the cathodoluminescent spectra of untreated and ball-milled SiO2 powder.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Díaz-Guerra, C., Montone, A., Piqueras, J., & Cardellini, F. (2002). Structural and cathodoluminescence study of mechanically milled silicon. Semiconductor Science and Technology, 17(1), 77 - 82. https://doi.org/10.1088/0268-1242/17/1/312