In this article we report on the Si atomic environment, investigated by near edge x-ray absorption fine structure (NEXAFS) measurements, and on the optical properties of porous silicon samples having different porosity values (30%, 60%, 80%), the sample with the lowest porosity not being luminescent. On the high porosity samples, time resolved photoluminescence measurements have been performed as a function of the temperature in the 10 K≤T≤300 K. The comparison between structural and optical properties shows that the NEXAFS measurements are consistent with the appearance of a large number of passivating Si-H groups on the surface of the highest porosity samples.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Di Francia, G., Turchini, S., Prosperi, T., Martelli, F., Amato, G., & De Santis, M. (1994). Structural and optical properties of porous silicon at different porosities. Journal of Applied Physics, 76(6), 3787 - 3790. https://doi.org/10.1063/1.357382