Structural modification of laser annealed a-Si

U. Coscia, G. Ambrosone, C. Minarini, V. Parisi, S. Schutzmann, A. Tebano

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Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing experiments. After the laser treatments all the films show structural modifications. It has been obtained that with increasing x the crystallinity degree of the Si phase decreases, while that of the SiC phase increases and becomes predominant for x = 0.39. In the overstoichiometric samples only the c-SiC phase has been observed. In all the treated samples 3C-SiC crystallites have been detected. © 2005 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)4493 - 4496
Number of pages4
JournalApplied Surface Science
Issue number13 SPEC. ISS.
Publication statusPublished - 30 Apr 2006
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Coscia, U., Ambrosone, G., Minarini, C., Parisi, V., Schutzmann, S., & Tebano, A. (2006). Structural modification of laser annealed a-Si. Applied Surface Science, 252(13 SPEC. ISS.), 4493 - 4496.