Thin films of indium tin oxide (ITO) have been deposited on fused quartz substrates by the spray deposition and rf-magnetron sputtering methods and their optical and electrical properties investigated. The junction properties of fabricated ITO/pCdTe and ITO/pInP structures have also been studied and their electrical properties presented. It is established that the deposited ITO films have a lattice constant of 10.14 Å and grow in cubic modifications along the (400) direction. Their transmittance value rises up to between 85% and 90% and extends well beyond the visible range of the spectrum. In the forward direction of the ITO/pCdTe structure, it is suggested that tunnelling dominated processes determine the current flow mechanism. Recombination currents at the interface region and thermionic-emission currents, however, dominate in the ITO/pInP structure at low bias and high bias respectively. The two structures can best be described as heterojunctions. © Elsevier Science Ltd.
All Science Journal Classification (ASJC) codes
- Renewable Energy, Sustainability and the Environment
Yakubu, H., & Thilakan, P. (2000). Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates. Renewable Energy, 20(2), 155 - 165. https://doi.org/10.1016/S0960-1481(99)00097-X