Study of the electrical and junction properties of ITO thin films deposited on CdTe and InP substrates

H. Yakubu, P. Thilakan

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Abstract

Thin films of indium tin oxide (ITO) have been deposited on fused quartz substrates by the spray deposition and rf-magnetron sputtering methods and their optical and electrical properties investigated. The junction properties of fabricated ITO/pCdTe and ITO/pInP structures have also been studied and their electrical properties presented. It is established that the deposited ITO films have a lattice constant of 10.14 Å and grow in cubic modifications along the (400) direction. Their transmittance value rises up to between 85% and 90% and extends well beyond the visible range of the spectrum. In the forward direction of the ITO/pCdTe structure, it is suggested that tunnelling dominated processes determine the current flow mechanism. Recombination currents at the interface region and thermionic-emission currents, however, dominate in the ITO/pInP structure at low bias and high bias respectively. The two structures can best be described as heterojunctions. © Elsevier Science Ltd.
Original languageEnglish
Pages (from-to)155 - 165
Number of pages11
JournalRenewable Energy
Volume20
Issue number2
DOIs
Publication statusPublished - 2000
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment

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