Study of the interface in n

M. Losurdo, A. Grimaldi, A. Sacchetti, P. Capezzuto, M. Ambrico, G. Bruno, Francesco Roca

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Abstract

Investigation of n-p heterojunction solar cells obtained by depositing a n-type thin silicon films either amorphous or microcrystalline on p-type c-Si is carried out. The study is focused on the improvement of the c-Si surface and emitter layer/c-Si substrate interface. The peculiarity is the use of SiF4-based plasmas for the in situ dry cleaning and passivation of the c-Si surface and for the PECVD deposition of the emitter layer that can be either amorphous (a-Si:H,F) or microcrystalline (μc-Si). The use of SiF4instead of the conventional SiH4results in a lower hydrogen content in the film and in a reduction of the interaction of the c-Si surface with hydrogen atoms. Furthermore, the dependence of the heterojunction solar cell photovoltaic parameters on the insertion of an intrinsic buffer layer between the n-type thin silicon layer and the p-type c-Si substrate is discussed. © 2002 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)171 - 175
Number of pages5
JournalThin Solid Films
Volume427
Issue number1-2
DOIs
Publication statusPublished - 3 Mar 2003

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Losurdo, M., Grimaldi, A., Sacchetti, A., Capezzuto, P., Ambrico, M., Bruno, G., & Roca, F. (2003). Study of the interface in n. Thin Solid Films, 427(1-2), 171 - 175. https://doi.org/10.1016/S0040-6090(02)01214-2