Investigation of n-p heterojunction solar cells obtained by depositing a n-type thin silicon films either amorphous or microcrystalline on p-type c-Si is carried out. The study is focused on the improvement of the c-Si surface and emitter layer/c-Si substrate interface. The peculiarity is the use of SiF4-based plasmas for the in situ dry cleaning and passivation of the c-Si surface and for the PECVD deposition of the emitter layer that can be either amorphous (a-Si:H,F) or microcrystalline (μc-Si). The use of SiF4instead of the conventional SiH4results in a lower hydrogen content in the film and in a reduction of the interaction of the c-Si surface with hydrogen atoms. Furthermore, the dependence of the heterojunction solar cell photovoltaic parameters on the insertion of an intrinsic buffer layer between the n-type thin silicon layer and the p-type c-Si substrate is discussed. © 2002 Elsevier Science B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry