Study of the radiation damage of Silicon Photo-Multipliers at the GELINA facility

M. Andreotti, W. Baldini, R. Calabrese, G. Cibinetto, A Cotta Ramusino, C. De Donato, R. Faccini, M. Fiorini, E. Luppi, R. Malaguti, A. Montanari, A. Pietropaolo, V. Santoro, G. Tellarini, L. Tomassetti, N. Tosi

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Abstract

In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenty-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium with a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2 × 109 neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, such as dark current and charge spectra, has been observed. An extensive comparison of the performances of all the tested devices will be presented. © 2014 IOP Publishing Ltd and Sissa Medialab srl.
Original languageEnglish
Article numberP04004
Pages (from-to)-
JournalJournal of Instrumentation
Volume9
Issue number4
DOIs
Publication statusPublished - 2014
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Mathematical Physics

Cite this

Andreotti, M., Baldini, W., Calabrese, R., Cibinetto, G., Ramusino, A. C., De Donato, C., ... Tosi, N. (2014). Study of the radiation damage of Silicon Photo-Multipliers at the GELINA facility. Journal of Instrumentation, 9(4), -. [P04004]. https://doi.org/10.1088/1748-0221/9/04/P04004