Study of the selenium incorporation in sputtered Cu, in alloys

P. Menna, A. Parretta, M. Pellegrino, L. Quercia, M.L. Addonizio

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Abstract

Thin CuInSe2films have been prepared in a two stage process by sputtering on Mo/glass substrates alternate Cu, In layers followed by selenization by vacuum evaporation. The compostional and the structural analysis of the compounds has been carried out by EDS and XRD, respectively. Selenium incorporated in the ternary compound assumes a constant value around 48% (at/at) while the Cu/In ratio ranges between 0.8 and 1.2. As the copper content is further lowered, selenium decisively increases up to almost 51% when Cu/In is 0.6. The inversion point in the Se-Cu/In diagram has been correlated to the formation of a secondary phase identified as the chalcopyrite vacancy-variant compound CuIn3Se5(OVC). The results are independent on the type of metallic precursors and on their preparation conditions. © 1994.
Original languageEnglish
Pages (from-to)165 - 170
Number of pages6
JournalSolar Energy Materials and Solar Cells
Volume35
Issue numberC
DOIs
Publication statusPublished - 11 Sep 1994

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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