Study of the thermo-optic effect in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide between 300 and 500 K at 1.55 μm

Francesco G. Della Corte, Maurizio Esposito Montefusco, Luigi Moretti, Ivo Rendina, Alfredo Rubino

Research output: Contribution to journalArticle

41 Citations (Scopus)


The thermo-optic coefficients of hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon carbide (a-SiC:H) - two of the main amorphous semiconductors in optoelectronics - have been measured and critically analyzed in the practical device operation temperature range 300-500 K, at the communication wavelength of 1.55 μm. The experimental data have been fitted using a single-oscillator model that takes into account the shape of the ∈2spectrum of the amorphous materials. In particular, for a-Si:H, the extracted parameters significantly extend, and are consistent with, the few data reported in the literature; an interesting analogy with crystalline silicon is also found and discussed. Complete results for a-SiC:H are finally reported. © 2001 American Institute of Physics.
Original languageEnglish
Pages (from-to)168 - 170
Number of pages3
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 9 Jul 2001
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this