Subpicosecond and enhanced nanosecond PLD to grow ZnO films in nitrogen ambient

M. Jelinek, A. Klini, T. Kocourek, R. Zeipl, A. Santoni, C. Fotakis, E. Kaminska

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Abstract

The ZnO films were created by nanosecond and subpicosecond PLD in nitrogen-oxygen ambient for various deposition conditions and geometrical configurations. All films were c-axis oriented. Films exhibited n-type conductivity. The nitrogen content in the films was below the detection limit of Rutherford Backscattering (RBS), wavelength dispersive X-ray spectroscopy (WDX) and X-ray photoelectron spectroscopy (XPS). The content of 1021at/cm3was demonstrated by secondary ion mass spectroscopy (SIMS). Resistivity, mobility and carrier density were also measured. © 2005 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)418 - 420
Number of pages3
JournalSurface and Coatings Technology
Volume200
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 1 Oct 2005
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Jelinek, M., Klini, A., Kocourek, T., Zeipl, R., Santoni, A., Fotakis, C., & Kaminska, E. (2005). Subpicosecond and enhanced nanosecond PLD to grow ZnO films in nitrogen ambient. Surface and Coatings Technology, 200(1-4 SPEC. ISS.), 418 - 420. https://doi.org/10.1016/j.surfcoat.2005.02.020