The ZnO films were created by nanosecond and subpicosecond PLD in nitrogen-oxygen ambient for various deposition conditions and geometrical configurations. All films were c-axis oriented. Films exhibited n-type conductivity. The nitrogen content in the films was below the detection limit of Rutherford Backscattering (RBS), wavelength dispersive X-ray spectroscopy (WDX) and X-ray photoelectron spectroscopy (XPS). The content of 1021at/cm3was demonstrated by secondary ion mass spectroscopy (SIMS). Resistivity, mobility and carrier density were also measured. © 2005 Elsevier B.V. All rights reserved.
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Jelinek, M., Klini, A., Kocourek, T., Zeipl, R., Santoni, A., Fotakis, C., & Kaminska, E. (2005). Subpicosecond and enhanced nanosecond PLD to grow ZnO films in nitrogen ambient. Surface and Coatings Technology, 200(1-4 SPEC. ISS.), 418 - 420. https://doi.org/10.1016/j.surfcoat.2005.02.020