Superconducting and structural properties of Nb films covered by plasma enhanced chemical vapor deposited a-Si:H layers for superconducting qubit application

A. Bruno, P. Mengucci, L.V. Mercaldo, M.P. Lisitskiy

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With a view to the fabrication of superconducting qubits with low decoherence time, we have investigated the influence of a-Si:H deposition by the plasma enhanced chemical vapor deposition method at 250 °C on the superconducting and structural properties of a 20 nm thick Nb film treated by two surface protection methods: plasma nitridation and deposition of a thin unhydrogenated Si layer. A suppression of the Tc and an increase of the residual resistivity are observed due to hydrogen diffusion and decomposition of the native surface oxide, with subsequent oxygen diffusion caused by sample heating. The unhydrogenated Si layer is found to efficiently protect the Nb films against both diffusion processes. © 2013 IOP Publishing Ltd.
Original languageEnglish
Article number035004
Pages (from-to)-
JournalSuperconductor Science and Technology
Issue number3
Publication statusPublished - Mar 2013


All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Materials Chemistry
  • Electrical and Electronic Engineering

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