Surface analysis study of the oxidation of organotin films deposited by ArF excimer laser chemical vapor deposition

R. Larciprete, E. Borsella, P. De Padova, P. Perfetti, C. Crotti

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Abstract

ArF excimer laser photolysis of gas phase tetramethyltin was used to deposit thin organotin films on Si. In situ Auger electron spectroscopy and x-ray photoelectron spectroscopy (XPS) film analysis, showed the presence of C and Sn, which, according to C 1s and Sn 3d5/2peak deconvolution, were organized in highly branched polymeric chains likely containing H as well. The film was oxidized at room temperature by exposure to controlled quantities of O2up to 5.4 × 1012L. Sn 3d5/2, C 1s, and O 1s XPS peaks monitoring allowed us to follow the sequence of the oxidative reactions. It resulted that oxygen attacks first the Sn-H and Sn-C sites leading to the elimination of H2O and C containing volatile compounds, which determines a rearrangement of the cleaved bonds and an overall decrease of the measured C content. After this fast phase, oxygen is inserted in the Sn-Sn and Sn-C bonds, with formation of Sn-O-Sn, Sn-O-C, and Sn-C-O species. At the highest oxygen doses the dominating SnO2component shows that almost all available Sn bonds are oxidized to Sn4+. However, either core level or valence-band spectroscopy demonstrated that below the near-surface layer the tin oxide phase remains substoichiometric, as if the SnO2at the surface behaves as a passivating agent toward further oxidation. © 1997 American Vacuum Society.
Original languageEnglish
Pages (from-to)2492 - 2501
Number of pages10
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume15
Issue number5
DOIs
Publication statusPublished - 1997
Externally publishedYes

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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